Coupling model of electromigration and experimental verification – Part I: Effect of atomic concentration gradient

This paper presented integrated electromigration (EM) studies through experiment, theory, and simulation. First, extensive EM tests were performed using Blech standard wafer-level acceleration test (SWEAT)-like structures, which fabricated on four-inch wafers. Second, a molecular dynamics (MD) simulation-based diffusion-induced strain was incorporated into the existing coupled theory. Third, one-dimensional (1D) governing equations in terms of atomic concentration for un-passivated passivated configurations derived void formation growth, modified Eshelby's solution to consider effect passivation. Fourth, systematic approach established, including theoretical formulations experimental methods, obtain key material properties, i.e., critical diffusivity. We then determined material's properties from specific set data, aluminium (Al) as carrier demonstration. These used predict time failure growth under various conditions. The results agreed well with data. Moreover, we theoretically threshold products current density conductor length configurations, respectively. Both experiment theory showed that, absence mechanical stress self-diffusion, opposite electron wind, significant resisting development. However, when present, such migration played dominant role Our numerical that exponent n Black's law remained 2 range greater than 0.2 MA/cm2 rapidly approached infinity at low level density.